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학술지 Facile Fabrication of Self-assembled ZnO Nanowire Network Channels and Its Gate-controlled UV Detection
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저자
장호찬, 이도훈, 김현수, 박종혁, 이병양
발행일
201812
출처
Nanoscale Research Letters, v.13, pp.1-9
ISSN
1556-276X
출판사
Springer
DOI
https://dx.doi.org/10.1186/s11671-018-2774-0
협약과제
18PB5100, 대면적 그래핀 기판을 이용한 저비용, 고품위의 III-V 나노와이어 발광소자 개발, 박종혁
초록
We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300혻°C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 105, transconductance around 47 nS, and mobility around 0.175혻cm2혻V?닋 1혻s?닋 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage Vds, showing maximum photoresponsivity at Vds = 7혻V.
키워드
Heat treatment, Photodetectors, Self-assembly, Zinc oxide nanowires
KSP 제안 키워드
FET devices, Facile fabrication, Field-effect transistors(FETs), Gate-controlled, Molecular surface, N-type, NW network, Photoresponsive behavior, UV detection, UV light, UV sensors