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Conference Paper Si-도핑된 베타-산화갈륨 에피 채널층 기반 Circular-MOSFETs 제작 및 특성

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Authors: 조규준, 정현욱, 장우진, 문재경

Issue Date: 2019-06

Citation: 한국전기전자재료학회 학술 대회 (하계) 2019, pp.1-1

Language: Korean

Type: Conference Paper

Project Code: 19PB3300, Development of high-quality Ga2O3 epitaxial material with low defect density (1x104cm-2) and power device technology with breakdown voltage (1KV), Mun Jae Kyoung

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