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Conference Paper Si-도핑된 베타-산화갈륨 에피 채널층 기반 Circular-MOSFETs 제작 및 특성
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Authors
조규준, 정현욱, 장우진, 문재경
Issue Date
2019-06
Citation
한국전기전자재료학회 학술 대회 (하계) 2019, pp.1-1
Language
Korean
Type
Conference Paper
Project Code
19PB3300, Development of high-quality Ga2O3 epitaxial material with low defect density (1x104cm-2) and power device technology with breakdown voltage (1KV), Mun Jae Kyoung