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학술지 Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs
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저자
장성재, 조규준, 정현욱, 김정진, 장유진, 배성범, 김동석, 배영호, 윤형섭, 안호균, 민병규, 김해천, 임종원, 강동민
발행일
201912
출처
ECS Journal of Solid State Science and Technology, v.8 no.12, pp.245-248
ISSN
2162-8769
출판사
Electrochemical Society (ECS)
DOI
https://dx.doi.org/10.1149/2.0251912jss
협약과제
19ZB1600, 질화붕소 분리층과 소자 전사 기술을 이용한 다목적 초고주파 소자 개발, 장성재
초록
The proton radiation hardness has been investigated in GaN-based MIS-HEMTs with various gate insulating systems. Through the pulsed mode measurements and carrier mobility extraction, we have revealed that the Coulomb scattering generated by the trapped charges inside of the gate insulating layer is a key device performance degradation factor. We also have found out that SiN/Al2O3 bi-layer gate insulating system exhibits stronger immunity to the proton radiation compared to the SiN single-layer gate insulating system since the dielectric layer quality of ALD deposited Al2O3 is better than that of PECVD deposited SiN layer. Our systematic research emphasizes that to employ an excellent quality dielectric layer such as Al2O3 is essential factor for the improvement of the proton radiation hardness in GaN-based MIS-HEMTs.
KSP 제안 키워드
Carrier mobility, Degradation factor, GaN-Based, Gate insulator, Key device, Pulsed mode, Radiation hardness, Single-layer, Trapped charge, bi-layer, coulomb scattering