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학술대회 Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs
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저자
장성재, 정현욱, 조규준, 강수철, 노윤섭, 이상흥, 김성일, 김해천, 안호균, 임종원
발행일
202010
출처
PRiME 2020 (ECS Transactions 98), v.98 no.5, pp.519-526
DOI
https://dx.doi.org/10.1149/09805.0519ecst
협약과제
19VU1700, 국방 무기체계용 핵심 반도체 부품 자립화 플랫폼 개발, 임종원
초록
The impact of the passivation system on the device performance has been studied in GaN-based MIS-HEMTs using SiN/Al2O3 bi-layered passivation. The deposition of SiN and Al2O3 passivation layer induced the compressive and tensile stress on GaN channel layer, respectively. Through the Al2O3 deposition on top of SiN layer, the mechanical stress and device characteristics were modulated. The device properties such as carrier mobility and concentration at the hetero-interface were ameliorated when the slight tensile stress was applied on the GaN channel compared to the compressive stress. The proton radiation hardness corresponding to the passivation system was also researched. The SiN/Al2O3 passivation system exhibited stronger immunity to the proton radiation than that of SiN passivation due to the superior dielectric quality of Al2O3. These results highlight that the SiN/Al2O3 bi-layered passivation is promising technique for the optimization of the device performance and improvement of proton radiation hardness in GaN-based MIS-HEMTs.
KSP 제안 키워드
Carrier mobility, Channel layer, Compressive stress, Device characteristics, Device properties, GaN-Based, Hetero-interface, Radiation hardness, SiN Passivation, Tensile stress, device performance