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학술지 A Dual-path High Linear Amplifier for Carrier Aggregation
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저자
강동우, 최장홍
발행일
202010
출처
ETRI Journal, v.42 no.5, pp.773-780
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.2020-0121
협약과제
18HB1400, 초고속 통신 및 영상 신호처리를 위한 광/THz 원천기술 연구개발, 송민협
초록
A 40혻nm complementary metal oxide semiconductor carrier-aggregated drive amplifier with high linearity is presented for sub-GHz Internet of Things applications. The proposed drive amplifier consists of two high linear amplifiers, which are composed of five differential cascode cells. Carrier aggregation can be achieved by switching on both the driver amplifiers simultaneously and combining the two independent signals in the current mode. The common gate bias of the cascode cells is selected to maximize the output 1혻dB compression point (P1dB) to support high-linear wideband applications, and is used for the local supply voltage of digital circuitry for gain control. The proposed circuit achieved an output P1dB of 10.7혻dBm with over 22.8혻dBm of output 3rd-order intercept point up to 0.9혻GHz and demonstrated a 55혻dBc adjacent channel leakage ratio (ACLR) for the 802.11af with ?닋5혻dBm channel power. To the best of our knowledge, this is the first demonstration of the wideband carrier-aggregated drive amplifier that achieves the highest ACLR performance.
키워드
adjacent channel leakage ratio, carrier aggregation, complementary metal oxide semiconductor, driver amplifier
KSP 제안 키워드
Adjacent channel leakage ratio(ACLR), Carrier aggregation, Complementary metal-oxide-semiconductor(CMOS), Current-mode(CM), Driver Amplifier, Gain Control, Intercept point(IIP3), Internet of Things applications, Internet of thing(IoT), Linear amplifier, Metal-oxide(MOX)
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