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학술지 Photoinduced Synaptic Behavior of InxTiyO Thin Film Transistors
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저자
임정욱, 김태윤, 김지은, 윤선진, 정광훈, 박민아
발행일
202104
출처
Advanced Electronic Materials, v.7 no.4, pp.1-7
ISSN
2199-160X
출판사
Wiley
DOI
https://dx.doi.org/10.1002/aelm.202001049
협약과제
20ZB1100, ICT 창의기술 개발, 백용순
초록
Herein, InxTiyO films are successfully deposited via the atomic layer deposition method, which involves sub-cycles of In2O3 and TiO2 application at a growth temperature of 200 °C. InxTiyO films are an excellent alternative to In2O3 films for use in channels of thin film transistors (TFTs), and can be used to avoid issues such as metal-like conduction characteristics and undesirable negative shifts. Adjusting the addition of TiO2 to In2O3 enables modulation of the cut-off wavelength in the UV region. However, the addition of TiO2 adversely affects the on-current level. The TiO2 content in the InxTiyO films is optimized based on photosensitivity and current level, wherein the films are used as the channel layer in photo-TFTs; consequently, a photo-synaptic behavior is achieved. The InxTiyO film-based memory devices are programmed and erased using UV light and gate voltage, respectively, wherein deep trap sites at the interface between the InTiO and Al2O3 layers facilitate the retention of charge during memory operation. The memory on/off ratio deteriorates slightly with a lapse in retention time of 4 × 104 s after 20 program/erase (P/E) cycles. Moreover, in the InxTiyO-based TFTs, excellent linearity is achieved during potentiation due to a good photo-synaptic behavior.
키워드
atomic layer deposition, oxide semiconductors, photo-induced memory, thin film transistors
KSP 제안 키워드
AND gate, Atomic layer deposition method, Channel layer, Conduction characteristics, Cut-off wavelength, Deep traps, Oxide semiconductor, Photo-induced memory, Thin-Film Transistor(TFT), Trap sites, UV light