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학술지 High Performance of Ultralow Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate
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저자
박동진, 김용해, 박병옥
발행일
201205
출처
Solid-State Electronics, v.75, pp.97-101
ISSN
0038-1101
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.sse.2012.04.028
협약과제
12ZF1100, Seed형 기술개발을 위한 창의형 연구사업, 박선희
초록
A high performance ultralow temperature polycrystalline silicon (poly-Si) thin film transistor (TFT) was obtained on a plastic substrate using the optimization of a triple layered buffer process for a suppression the damage on plastic substrate during laser dopant activation, the high quality SiO 2 interface layer formation between the gate dielectric film and the poly-Si film using plasma oxidation, and a successful crystallization of large grain poly-Si films with a sequential lateral solidification (SLS) method. High performances with field effect mobilities of 180 and 62 cm 2 V -1 s -1, threshold voltages of 1.4 and -1.6 V and sub-threshold swings of 0.78 and 0.92 V/decade were obtained for n-channel metal-oxide-semiconductor (nMOS) and p-channel metal-oxide-semiconductor (pMOS) TFT on plastic substrate, respectively. © 2012 Elsevier Ltd. All rights reserved.
키워드
AMOLED, Flexible display, Poly-silicon, SLS
KSP 제안 키워드
Gate dielectric film, High performance, Large grain, Layer formation, Metal-oxide(MOX), P-Channel, Plastic substrate, Poly-Si film, Poly-silicon, Polycrystalline silicon(poly-Si), Polycrystalline silicon thin film