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학술지 A 10 × 10 Gb/s DFB Laser Diode Array Fabricated Using a SAG Technique
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권오기, 임영안, 한영탁, 이철욱, 김기수, 오수환
Optics Express, v.22 no.8, pp.9073-9080
Optical Society of America(OSA)
13VB1700, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
We present a ten-channel distributed feedback laser diode array (DFB-LDA) developed for the transmission of 100-Gb/s (10 × 10 Gb/s) signals separated by an 8 nm wavelength grid at a center wavelength of 1.55 μm. For the fabrication of this type of laser array, a selective area growth (SAG) technique, electron-beam lithography, and a reverse-mesa ridge waveguide LD processing technique were adopted to offer a tailored gain spectrum to each channel, providing both accurate lasing-wavelength control and excellent single-mode yield over all channels, and reducing the fabrication cost and electrical and thermal resistances. To evaluate the operational performance of the fabricated chip systematically, we also developed a sub-assembly module containing a ten-channel ?/4-shifted DFB-LDA, ten matching resistors, flexible printed circuit board (FPCB) wiring, and a thermistor on a metal optical bench. The static and dynamic properties of all channels of the fabricated array are examined in this paper. The developed sub-assembly module shows a side-mode suppression ratio (SMSR) of > 50 dB, a modulation bandwidth of > 10 GHz, and a clear eyeopening before and after a 2-km transmission with dynamic extinction ratio of > 5 dB.©2013 Optical Society of America.
KSP 제안 키워드
10 Ghz, Center wavelength, DFB laser, Distributed feedback laser diode, Distributed feedback lasers(DFBs), Flexible printed circuit board(FPCB), Gain spectrum, Laser array, Laser diode(LD), Laser diode array, Modulation bandwidth