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학술지 Na Effect on Flexible Cu(In,Ga)Se2 Photovoltaic Cell Depending on Diffusion Barriers (SiOx, i-ZnO) on Stainless Steel
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저자
이우정, 조대형, 위재형, 한원석, 김제하, 정용덕
발행일
201410
출처
Materials Chemistry and Physics, v.147 no.3, pp.783-787
ISSN
0254-0584
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.matchemphys.2014.06.021
초록
Cu(In,Ga)Se2 (CIGS) based-photovoltaic (PV) cells with different diffusion barriers of SiOx and i-ZnO were fabricated on stainless steel (STS) substrate and their electrical characteristics were investigated by measuring J-V curves under illuminated and dark conditions. The physical properties of the CIGS film depending on type of diffusion barrier were also analyzed using X-ray diffraction and secondary ion mass spectroscopy. The efficiency of the CIGS-PV cell with i-ZnO barrier was approximately 2% higher than that with the SiOx barrier. Through the analysis of dark J-V curves, we discovered that distinctive defects were formed in the band gap of CIGS based on which diffusion barrier contacted the STS. The diffraction pattern showed a slightly different tendency of the peak intensity ratio of (220/204)/(112) in the PV cell with the i-ZnO barrier, which was slightly higher than that in the PV cell with SiOx barrier. In elemental depth profile, a deficient Ga profile was observed near the surface of the CIGS film with the SiOx barrier, and an abundant Na profile within the CIGS film with the i-ZnO barrier was detected. This is attributed to a difference in thermal conduction through the diffusion barriers during CIGS film growth, originating from the larger thermal conductivity of ZnO compared with SiOx. © 2014 Elsevier B.V. All rights reserved.
키워드
Chalcogenides, Diffusion, Secondary ion mass spectroscopy, Thin films
KSP 제안 키워드
Band gap, CIGS film, Dark conditions, Depth profile, Diffusion barrier(DB), Intensity ratio, J-V, Na effect, Peak intensity, Physical Properties, Secondary Ion Mass Spectroscopy(SIMS)