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학술지 Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests
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저자
이종민, 민병규, 주철원, 안호균, 문재경, 임종원, 남은수
발행일
201405
출처
한국물리학회, v.64 no.10, pp.1446-1450
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.64.1446
협약과제
14ZB1400, ESSOP CUBE 기술 기반 차세대 레이더 3D 모듈 개발, 이진호
초록
In this paper, we study the degradation phenomenon and its effect on the lifetime of AlGaN/GaN HEMTs by means of high-temperature operation tests. To estimate the self-heating effect, we performed electrical measurements at several temperatures. Packaged devices were tested at various bias levels and a plate temperature of 150 °C. The lifetime of devices strongly depended on the junction temperature. By means of electrical characterization, the device degradation was demonstrated and evaluated. After the operation test, the drain current and the transconductance were found to be decreased and the threshold voltage was shifted in a positive direction. The leakage current was remarkably decreased. On the basis of the experimental results, the degradation is ascribed to the hot electron effect and to Schottky contact degradation. © 2014 The Korean Physical Society.
키워드
AlGaN/GaN, Channel temperature, HEMT, Operation test, Reliability, Schottky contact
KSP 제안 키워드
AlGaN/GaN HEMTs, Channel temperature, Contact degradation, Drain current, Electrical characterization, Electrical measurements, High-temperature operation, Junction Temperature, Leakage current, Operation test, Schottky contacts