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학술지 Ku-Band GaN HPA MMIC with High-Power and High-PAE Performances
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저자
노윤섭, 최윤호, 염인복
발행일
201409
출처
Electronics Letters, v.50 no.19, pp.1361-1363
ISSN
0013-5194
출판사
IET
DOI
https://dx.doi.org/10.1049/el.2014.1211
협약과제
14MR3100, 차기위성 Flexible 통신방송 탑재체 핵심기술 개발, 안재영
초록
A Ku-band high-power and high-power-added efficiency (PAE) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) is demonstrated with a 0.25 μm gallium nitride (GaN) high electron mobility transistor technology on a silicon carbide substrate. Measured continuous-wave performances for the two-stage HPA in-fixture exhibit 17.5-18.3 W of output power (POUT) and 36.4-39.5% of PAE over the frequency range of 13.5-14.5 GHz. The fabricated two-stage HPA MMIC with all matching networks is as small as 3.3 × 3.5 mm, generating an output power density of 1522 mW/mm2.
KSP 제안 키워드
3.5 mm, 5 GHz, Frequency Range, GaN HPA, High electron mobility transistor(HEMT), High power amplifier(HPA), Integrated circuit, Ku-Band, Output power density, Power added efficiency(PAE), Two-Stage