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학술지 Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths
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저자
박영락, 김정진, 장우진, 장현규, 나제호, 이현수, 전치훈, 차호영, 문재경, 고상춘, 남은수
발행일
201407
출처
Electronics Letters, v.50 no.16, pp.1164-1165
ISSN
0013-5194
출판사
IET
DOI
https://dx.doi.org/10.1049/el.2014.1747
협약과제
14MB1200, 스마트 데이터센터용 차세대 광-전 모듈 기술, 남은수
초록
A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude. © The Institution of Engineering and Technology 2014.
KSP 제안 키워드
GaN diode, GaN-on-Si, Non-recessed, Reverse leakage current, Schottky barriers(SBs), low onset voltage, recess depth, schottky barrier diode(SBD)