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학술지 Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate
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저자
안호균, 김진식, 배성범, 김해천, 강동민, 김성일, 이종민, 민병규, 윤형섭, 임종원, 권용환, 남은수, 박형무, 김현석, 이정희
발행일
201405
출처
Solid-State Electronics, v.95, pp.42-45
ISSN
0038-1101
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.sse.2014.03.005
협약과제
14ZB1400, ESSOP CUBE 기술 기반 차세대 레이더 3D 모듈 개발, 이진호
초록
This paper demonstrates normally-off dual gate AlGaN/GaN MISFETs with a selective area-recessed floating gate fabricated on the AlGaN/GaN-based heterostructure with an AlN insertion layer. For the fabrication of the dual gate structure, the AlGaN layer in the control gate region was fully recessed and then an Al2O3 layer as a gate dielectric was deposited by the atomic layer deposition method, which ensures the normally-off operation and greatly decreases the leakage current. An additional floating gate with selective area-recessed patterns, which is located between the control gate and the drain electrode, was employed to enhance the breakdown voltage. The fabricated normally-off dual gate AlGaN/GaN MISFET exhibited a threshold voltage of 2 V, a high ION/IOFF ratio of 3 × 108 at a drain voltage of 10 V, a maximum transconductance of 88 mS/mm at a gate voltage of 5.8 V, a drain current density of 364 mA/mm at a gate voltage of 8 V, and a breakdown voltage of 880 V. © 2014 Elsevier Ltd. All rights reserved.
키워드
Floating gate, GaN, MISFET, Normally off, Off-state performance, On-state performance
KSP 제안 키워드
Atomic layer deposition method, Breakdown voltage(BDV), Control gate, Drain current, Drain electrode, Drain voltage, Floating gate, GaN-Based, Insertion layer, Leakage current, Normally-Off