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학술지 A 2.14-GHz GaN MMIC Doherty Power Amplifier for Small-Cell Base Stations
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저자
김철호, 지승훈, 조권도, 이광천, 김범만
발행일
201404
출처
IEEE Microwave and Wireless Components Letters, v.24 no.4, pp.263-265
ISSN
1531-1309
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LMWC.2014.2299536
협약과제
13VI1400, 스마트 모바일 서비스를 위한 B4G 이동통신 기술 개발, 송평중
초록
A novel 2.14-GHz Doherty power amplifier (PA) was designed and fabricated using a 0.25-μ m GaN on SiC monolithic microwave integrated circuit (MMIC), to build small-cell base stations. To reduce the size and loss, lumped passive elements were employed in a manner of minimizing the device count. The core components of the PA were integrated on the MMIC die to reduce the area, and low-loss chip inductors were mounted around the die to enhance the efficiency. An unconventional uneven power splitting was also used to enhance the performance. For a continuous wave, a 2-dB-gain-compression power of 40.5 dBm was obtained with a drain efficiency (DE) of 60.4%. At 7.3-dB backed-off power, a DE of 52.2% was obtained with a power gain of 15.7 dB. When a 10-MHz-bandwidth long-term evolution signal with 7.1-dB peak-to-average power ratio was applied, an adjacent channel leakage ratio (ACLR) of-34.7 dBc with a DE of 51.8% was achieved at an average power of 33.2 dBm. After a digital pre-distortion process, the ACLR and DE were improved to-49.6 dBc and 52.7%, respectively. © 2014 IEEE.
키워드
Doherty power amplifier (Doherty PA), gallium nitride (GaN), long-term evolution (LTE), monolithic microwave integrated circuit (MMIC)
KSP 제안 키워드
Adjacent channel leakage ratio(ACLR), Doherty PA, Doherty power amplifier(DPA), GaN on SiC, Long term Evolution(LTE), Microwave monolithic integrated circuits(MMIC), Passive elements, Peak-to-Average-Power-Ratio(PAPR), Power gain, Power splitting, Small cells