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학술지 Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method
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저자
황치선, 박상희, 오힘찬, 유민기, 조경익, 윤성민
발행일
201403
출처
IEEE Electron Device Letters, v.35 no.3, pp.360-362
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2013.2296604
협약과제
13VB1900, 에너지 절감을 위한 7인치기준 2W급 환경적응 디스플레이 신모드 핵심 원천 기술 개발, 추혜용
초록
Vertical channel ZnO thin-film transistors (TFTs) were fabricated on glass and flexible substrates. Conformally deposited thin films prepared using atomic layer deposition were used for the active layer, gate insulator, and gate electrode. Owing to the very short channel (0.5 μ m and very thin (20 nm) gate insulator layer, the ON-current of the vertical channel ZnO TFT was 57 μ A at the gate and drain voltages of 3 and 4 V, respectively. Vertical channel oxide TFTs may be promising for device applications with low power consumption. © 2014 IEEE.
키워드
In-Ga-Zn-O (IGZO), Oxide semiconductor, thin-film transistor (TFT), vertical channel
KSP 제안 키워드
20 nm, AND gate, Active Layer, Atomic layer deposition method, Flexible substrate, Gate insulator, In-Ga-Zn-O(IGZO), Insulator layer, Oxide TFTs, Oxide semiconductor, Short channel