ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Influence of a Self-Assembled Monolayer on Indium-Zinc-Oxide Semiconductor Thin-Film Transistors
Cited 0 time in scopus Download 13 time Share share facebook twitter linkedin kakaostory
저자
양용석, 유인규, 홍성훈, 박주현, 윤호경, Young Hun Kang, Changjin Lee, Song Yun Cho
발행일
201412
출처
Journal of the Korean Physical Society, v.65 no.10, pp.1555-1558
ISSN
0374-4884
출판사
한국물리학회 (KPS)
DOI
https://dx.doi.org/10.3938/jkps.65.1555
초록
The fabrication of an active-matrix liquid-crystal display by using printing processes offers the potential to reduce the number of photolithography steps and the manufacturing costs. In this study, we prepare the indium-zinc-oxide (IZO) thin-film transistors (TFTs) by using non-vacuum processes such as inkjet printing. The self-assembled monolayers of hexadecanethiol (HDT) on the surface of the oxide semiconductor prior to the inkjet printing of Ag were employed to modify the electric barrier between the IZO and the printed Ag. The field-effect mobility of the IZO TFTs with 0.5-mM HDT treatments and with the inkjet-printed Ag electrodes that were investigated by using their current-voltage characteristics was approximately 0.36 cm2/Vs.
키워드
Electric barrier, Indium zinc oxide, Inkjet printing, Self-assembled monolayers, Thin film transistors, Work function
KSP 제안 키워드
Ag electrode, Indium zinc oxide, Non-vacuum processes, Oxide semiconductor, Thin-Film Transistor(TFT), Work Function, Zinc oxide(ZnO), current-voltage characteristics, field-effect mobility, inkjet printing, inkjet-printed