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학술지 Photo-Assisted Bistable Switching Using Mott Transition in Two-Terminal VO2 Device
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서기완, 김봉준, 이용욱, 김현탁
Applied Physics Letters, v.100 no.1, pp.1-3
American Institute of Physics (AIP),
12ZF1100, Seed형 기술개발을 위한 창의형 연구사업, 박선희
In order to investigate bistable switching characteristics of planar junction devices based on vanadium dioxide (VO 2) thin films, we have measured the optical power dependence of the threshold voltage of the device, at which a current jump, regarded as the Mott metal-insulator transition (MIT), happened, by using an infrared laser with a wavelength of ~1.55 μm, illuminated onto the VO 2 film. In a test closed loop circuit connecting a DC voltage source, a standard resistor, and a VO 2 thin film device in series, the bistability of the voltage across the device (V D) was examined with respect to a variety of illumination powers (P Ls). By triggering the forward or reverse phase transition (Mott MIT) of the VO 2 film with SET or RESET optical pulse, respectively, the photo-assisted bistable switching of V D in the test circuit properly DC biased could be realized at an intermediate P L chosen between optical powers of SET and RESET pulses. In particular, the transient response of V D showed not only bistable states of V D but also their switching speed. © 2012 American Institute of Physics.
KSP 제안 키워드
Bistable switching, Closed-loop, DC voltage, Infrared laser, Loop circuit, Mott transition, Optical power, Optical pulse, Photo-assisted, Planar junction, Switching speed