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Conference Paper A Novel Superjunction Trench Double-Diffused MOSFETs Fabrication Process by Using High Aspect-ratio Trench Etching and Boron Lateral Diffusion Processes
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Authors
Issue Date
2012-07
Citation
International Conference on Microeletronics and Plasma Technology (ICMAP) 2012, pp.405-405
Language
English
Type
Conference Paper
KSP Keywords
Diffusion process, Fabrication process, High Aspect Ratio, Trench etching, lateral diffusion
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