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A SiGe BiCMOS High Voltage Driver for Class-S Power Amplifier
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- Authors
- Bonghyuk Park, Seunghyun Jang, Jaeho Jung
- Issue Date
- 2012-11
- Citation
- International Symposium on Radio-Frequency Integration Technology (RFIT) 2012, pp.41-43
- Language
- English
- Type
- Conference Paper
- Abstract
- A high voltage driver for Class-S power amplifier using SiGe BiCMOS process is presented in this paper. This high voltage driver is applied for making high voltage swing at the input of a power amplifier. The input of this driver is 600 mVp-p then the measured output is 780 mVp-p for single-ended. This driver dissipates 202 mW and it is suited for processing a bit stream of 2.4 Gbps and can be used as a driver stage for switching power amplifier. This high voltage driver is measured with fabricated delta-sigma modulator module. © 2012 IEEE.
- KSP Keywords
- Bit stream, Class-S power amplifier, Delta-Sigma Modulator, High voltage swing, Measured output, SiGe BiCMOS process, Single-Ended, Switching power amplifier, high voltage driver, power amplifiers(PAs)