상세정보
학술대회
A SiGe BiCMOS High Voltage Driver for Class-S Power Amplifier
- 발행일
- 201211
- 출처
- International Symposium on Radio-Frequency Integration Technology (RFIT) 2012, pp.41-43
- 협약과제
- 12MI1300, 차세대 이동통신 기지국용 Class-S 전력증폭기 기술 연구, 정재호
- 초록
- A high voltage driver for Class-S power amplifier using SiGe BiCMOS process is presented in this paper. This high voltage driver is applied for making high voltage swing at the input of a power amplifier. The input of this driver is 600 mVp-p then the measured output is 780 mVp-p for single-ended. This driver dissipates 202 mW and it is suited for processing a bit stream of 2.4 Gbps and can be used as a driver stage for switching power amplifier. This high voltage driver is measured with fabricated delta-sigma modulator module. © 2012 IEEE.
- KSP 제안 키워드
- Class-S power amplifier, Delta-Sigma Modulator, High voltage swing, Measured output, SiGe BiCMOS process, Single-Ended, Switching power amplifier, bit stream, high voltage driver, power amplifiers(PAs)