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Compact-sized high-modulation-efficiency silicon Mach–Zehnder modulator based on a vertically dipped depletion junction phase shifter for chip-level integration
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- Authors
- Gyungock Kim, Jeong Woo Park, In Gyoo Kim, Sanghoon Kim, Ki-Seok Jang, Sun Ae Kim, Jin Hyuk Oh, Jiho Joo, Sanggi Kim
- Issue Date
- 2014-04
- Citation
- Optics Letters, v.39, no.8, pp.2310-2313
- ISSN
- 0146-9592
- Publisher
- Optical Society of America(OSA),
- Language
- English
- Type
- Journal Article
- Abstract
- We present small-sized depletion-type silicon Mach-Zehnder (MZ) modulator with a vertically dipped PN depletion junction (VDJ) phase shifter based on a CMOS compatible process. The fabricated device with a 100 μm long VDJ phase shifter shows a VpLp of ~0.6 V cm with a 3 dB bandwidth of ~50 GHz at -2 V bias. The measured extinction ratios are 6 and 5.3 dB for 40 and 50 Gb/s operation under 2.5 Vpp differential drive, respectively. On-chip insertion loss is 3 dB for the maximum optical transmission. This includes the phase-shifter loss of 1.88 dB/100 μm, resulting mostly from the extra optical propagation loss through the polysilicon-plug structure for electrical contact, which can be readily minimized by utilizing finer-scaled lithography nodes. The experimental result indicates that a compact depletion-type MZ modulator based on the VDJ scheme can be a potential candidate for future chip-level integration. © 2014 Optical Society of America.
- KSP Keywords
- 3-dB bandwidth, 50 GB, CMOS compatible process, Differential drive, Electrical contact, Experimental Result, Mach-Zehnder (MZ) modulator, Optical propagation loss, Phase Shifter, Small-sized, insertion loss