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학술지 Compact-Sized High-Modulation-Efficiency Silicon Mach-Zehnder Modulator Based on a Vertically Dipped Depletion Junction Phase Shifter for Chip-Level Integration
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저자
김경옥, 박정우, 김인규, 김상훈, 장기석, 김선애, 오진혁, 주지호, 김상기
발행일
201404
출처
Optics Letters, v.39 no.8, pp.2310-2313
ISSN
0146-9592
출판사
Optical Society of America(OSA),
DOI
https://dx.doi.org/10.1364/OL.39.002310
협약과제
14MB1300, 실리콘 나노포토닉스 기반 차세대 컴퓨터 인터페이스 플랫폼 원천기술 개발, 김경옥
초록
We present small-sized depletion-type silicon Mach-Zehnder (MZ) modulator with a vertically dipped PN depletion junction (VDJ) phase shifter based on a CMOS compatible process. The fabricated device with a 100 μm long VDJ phase shifter shows a VpLp of ~0.6 V cm with a 3 dB bandwidth of ~50 GHz at -2 V bias. The measured extinction ratios are 6 and 5.3 dB for 40 and 50 Gb/s operation under 2.5 Vpp differential drive, respectively. On-chip insertion loss is 3 dB for the maximum optical transmission. This includes the phase-shifter loss of 1.88 dB/100 μm, resulting mostly from the extra optical propagation loss through the polysilicon-plug structure for electrical contact, which can be readily minimized by utilizing finer-scaled lithography nodes. The experimental result indicates that a compact depletion-type MZ modulator based on the VDJ scheme can be a potential candidate for future chip-level integration. © 2014 Optical Society of America.
KSP 제안 키워드
3-dB bandwidth, 50 GB, CMOS compatible process, Differential drive, Experimental Result, Mach-Zehnder (MZ) modulator, On-chip, Optical propagation loss, Phase Shifter, Small-sized, electrical contact