상세정보
학술지
Non-Toxically Enhanced Sulfur Reaction for Formation of Chalcogenide Thin Films Using a Thermal Cracker
- 발행일
- 201409
- 출처
- Journal of Materials Chemistry A : Materials for Energy and Sustainability, v.2 no.35, pp.14593-14599
- ISSN
- 2050-7488
- 출판사
- Royal Society of Chemistry (RSC)
- 협약과제
- 13VB4400, 대면적(0.9 x 1.6m2) 고효율(16%) CIGS 박막 태양전지 기술개발, 정용덕
- 초록
- Sulfur-based metal chalcogenide films have been widely used for high-performance optoelectronic devices due to their attractive optical and electrical properties. Although typical approaches to the chemical deposition of chalcogenide films have some advantages such as large-area coverage and high thickness controllability, these processes require highly toxic and expensive hydrogenated materials. Here, we demonstrate an enhanced sulfur reaction with an environmentally safe and cost-competitive method using a thermal sulfur cracker cell. The elevated cracking-zone temperature enhanced the reactivity of sulfur by cracking evaporated sulfur molecules into smaller molecules, and resulted in the formation of a high-quality ZnS phase maintaining a low substrate temperature. The fabricated ultra-thin ZnS film played an excellent role as a buffer layer of the Cu(In,Ga)Se2 thin-film solar cell, as the film showed high photovoltaic performances. © the Partner Organisations 2014.
- KSP 제안 키워드
- Area coverage, Buffer layer, Chalcogenide films, Chalcogenide thin film, Chemical deposition, Field effect transistors(Substrate temperature), High performance, High-quality, Low substrate temperature, Optical and electrical properties, Thin film solar cells