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Non-Toxically Enhanced Sulfur Reaction for Formation of Chalcogenide Thin Films Using a Thermal Cracker
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- Authors
- Dae-Hyung Cho, Woo-Jung Lee, Sang-Woo Park, Jae-Hyung Wi, Won Seok Han, Jeha Kim, Mann-Ho Cho, Dongseop Kim, Yong-Duck Chung
- Issue Date
- 2014-09
- Citation
- Journal of Materials Chemistry A : Materials for Energy and Sustainability, v.2, no.35, pp.14593-14599
- ISSN
- 2050-7488
- Publisher
- Royal Society of Chemistry (RSC)
- Language
- English
- Type
- Journal Article
- Abstract
- Sulfur-based metal chalcogenide films have been widely used for high-performance optoelectronic devices due to their attractive optical and electrical properties. Although typical approaches to the chemical deposition of chalcogenide films have some advantages such as large-area coverage and high thickness controllability, these processes require highly toxic and expensive hydrogenated materials. Here, we demonstrate an enhanced sulfur reaction with an environmentally safe and cost-competitive method using a thermal sulfur cracker cell. The elevated cracking-zone temperature enhanced the reactivity of sulfur by cracking evaporated sulfur molecules into smaller molecules, and resulted in the formation of a high-quality ZnS phase maintaining a low substrate temperature. The fabricated ultra-thin ZnS film played an excellent role as a buffer layer of the Cu(In,Ga)Se2 thin-film solar cell, as the film showed high photovoltaic performances. © the Partner Organisations 2014.
- KSP Keywords
- Area coverage, Chalcogenide films, Chalcogenide thin film, Chemical deposition, High performance, High-quality, Low substrate temperature, Optical and electrical properties, Optoelectronic devices, Thin film solar cells, buffer layer