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Journal Article
Characterization of ZnO–SnO2 nanocomposite thin films deposited by pulsed laser ablation and their field effect electronic properties
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- Authors
- Su-Jae Lee, Chi-Sun Hwang, Jae-Eun Pi, Min-Ki Ryu, Himchan Oh, Sung Haeng Cho, Jong-Heon Yang, Sang-Hee Ko Park, Hye Yong Chu
- Issue Date
- 2014-05
- Citation
- Materials Letters, v.122, pp.94-97
- ISSN
- 0167-577X
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- ZnO-SnO2 nanocomposite thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO2 oxides target, and their field effect electronic transport properties investigated as a function of annealing temperature. The films have a nanocomposite structure consisting of ZnO and SnO2 nanoparticles. The amorphous ZnO-SnO2 nanocomposite thin films, as oxide semiconductors, exhibited excellent electronic transport properties with saturation mobility of around 16.9 cm2/V s, turn-on voltage of ~-1 V, subthreshold swing of 0.22 V/decade, and high drain current on-to-off ratio of over 1010, enough to operate for next-generation microelectronic devices. These results are presumed due to the unique electronic structure of amorphous nanocomposite coupled with two heavy-metal Zn and Sn cations having spherically symmetric s-orbitals. © 2014 Elsevier B.V.
- KSP Keywords
- Amorphous ZnO, Annealing temperature, Coupled with, Drain current, Electronic properties, Electronic structure, Electronic transport properties, Microelectronic devices, Nanocomposite structure, Nanocomposite thin films, Next-generation