상세정보
학술지
Characterization of ZnO-SnO2 Nanocomposite Thin Films Deposited by Pulsed Laser Ablation and their Field Effect Electronic Properties
- 발행일
- 201405
- 출처
- Materials Letters, v.122, pp.94-97
- ISSN
- 0167-577X
- 출판사
- Elsevier
- 초록
- ZnO-SnO2 nanocomposite thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO2 oxides target, and their field effect electronic transport properties investigated as a function of annealing temperature. The films have a nanocomposite structure consisting of ZnO and SnO2 nanoparticles. The amorphous ZnO-SnO2 nanocomposite thin films, as oxide semiconductors, exhibited excellent electronic transport properties with saturation mobility of around 16.9 cm2/V s, turn-on voltage of ~-1 V, subthreshold swing of 0.22 V/decade, and high drain current on-to-off ratio of over 1010, enough to operate for next-generation microelectronic devices. These results are presumed due to the unique electronic structure of amorphous nanocomposite coupled with two heavy-metal Zn and Sn cations having spherically symmetric s-orbitals. © 2014 Elsevier B.V.
- KSP 제안 키워드
- Amorphous ZnO, Annealing temperature, Coupled with, Drain current, Electronic properties, Electronic structures, Electronic transport properties, Heavy metals, I-V characteristic(Transport property), Microelectronic devices, Nanocomposite thin films