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Conference Paper Study on the E/D - mode AlGaN/GaN MISFET with Al2O3 gate insulator grown by Atomic Layer Deposition
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Authors
Issue Date
2012-07
Citation
International Confernece on Microelectronics and Plasma Technology (ICMAP) 2012, pp.1-1
Language
English
Type
Conference Paper
KSP Keywords
Atomic Layer Deposition, gate insulator
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