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Conference Paper
Change of electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors depending on gate insulators
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- Authors
- Issue Date
- 2012-07
- Citation
- International Conference on Microelectronics and Plasma Technology (ICMAP) 2012, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- B-doped, Oxide thin films, Thin-Film Transistor(TFT), Zn oxide, electrical performance and stability, gate insulator, thin film(TF)