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Conference Paper
Current Status of GaN Technologies in ETRI
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- Authors
- Jae Kyoung Mun, Jong-Won Lim, Sang Choon Ko, Seong-il Kim, Eun Soo Nam
- Issue Date
- 2012-06
- Citation
- Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2012, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- ETRI is established as the national R&D institute of information and communication technology in 1976. ETRI has achieved many commercial global R&D results including CDMA Mobile, T-DMB, Wibro, etc. But in this paper, we present other R&D activities of ETRI focusing on the compound semiconductors for last over 25 years. My talk can be divided into two parts. In the first part, I will briefly introduce the R&D results for conventional compound semiconductors, such as GaAs and InP. We had set up the 3-inch and 4-inch processes in 1991 and 2000, respectively, for both high power and high frequency MMIC technologies. In the second part, I will talk about the GaN wideband gap semiconductors, next generation compound semiconductor platform. The starting of GaN R&Ds for RF amplifier and power switching devices was a little bit late, but we've recently got good results and will be presented in the conference. Additionally, I'll introduce new backside via-etching and copper plated metal-filling technologies. That will be a promising key technology for cost-effective solution of high power GaN-on-SiC and GaN-on-Si HEMTs.
- KSP Keywords
- 25 years, Current status, GaN on SiC, GaN-on-Si HEMTs, High frequency(HF), High power, Key technology, Power GaN, Power switching, RF Amplifier, Set up