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Effects of Nb2O5 and SiO2 Buffer Layers on the Suppression of Potassium Out-Diffusion into Indium Tin Oxide Electrode Formed on Chemically Strengthened Glass
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- Authors
- Chan-Hwa Hong, Jae-Heon Shin, Nae-Man Park, Kyung-Hyun Kim, Bo-Sul Kim, Joon-Seop Kwak, Byeong-Kwon Ju, Woo-Seok Cheong
- Issue Date
- 2014-09
- Citation
- Japanese Journal of Applied Physics, v.53, no.8S3, pp.1-4
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90% (at 550 nm) has been achieved. © 2014 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, Chemically strengthened glass, Electrical properties, ITO thin film, Indium Tin Oxide(ITO), Indium tin oxide electrodes, Ionized physical vapor deposition, Room temperature, buffer layer, optical transmittance, out-diffusion