상세정보
학술지
Effects of Nb2O5 and SiO2 Buffer Layers on the Suppression of Potassium Out-Diffusion into Indium Tin Oxide Electrode Formed on Chemically Strengthened Glass
- 발행일
- 201409
- 출처
- Japanese Journal of Applied Physics, v.53 no.8S3, pp.1-4
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 14PB1400, 윈도우 일체형 30인치급 터치센서 개발, 정우석
- 초록
- We have investigated the electrical properties of indium tin oxide (ITO) thin films deposited on chemically strengthened glass (CSG) substrate by room-temperature ionized physical vapor deposition (IPVD). The ITO thin film on the CSG substrate shows a higher sheet resistance after hightemperature anneal process (>200 °C) possibly due to the out-diffusion of potassium ions (K+) from the CSG. We have improved the electrical properties of the ITO thin film by inserting Nb2O5/SiO2 buffer layers between the ITO layer and the CSG substrate. As a result, a protected and index-matched 30-nm-thick ITO thin film with sheet resistance less than 120O/sq and optical transmittance higher than 90% (at 550 nm) has been achieved. © 2014 The Japan Society of Applied Physics.