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Conference Paper
Effects of the NH Content of PECVD Grown SiNx Gate Insulator on the Electrical Performance and Stability of Ti, B-doped InZnO Thin Film Transistors
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- Authors
- Issue Date
- 2012-11
- Citation
- MRS Meeting 2012 (Fall), pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- B-doped, Thin-Film Transistor(TFT), electrical performance and stability, gate insulator, thin film(TF)