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Conference Paper
Effects of the rf power of PECVD for gate insulator deposition on the electrical performance and stability of Ti, B-doped InZnO thin film transistors
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- Authors
- Issue Date
- 2012-10
- Citation
- Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) 2012, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- B-doped, RF Power, Thin-Film Transistor(TFT), electrical performance and stability, gate insulator, thin film(TF)