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Effects of the rf power of PECVD for gate insulator deposition on the electrical performance and stability of Ti, B-doped InZnO thin film transistors
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- 저자
- 발행일
- 201210
- 출처
- Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) 2012, pp.1-1
- 협약과제
- 11VB2100, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
- KSP 제안 키워드
- B-doped, Gate insulator, RF Power, Thin-Film Transistor(TFT), electrical performance and stability, thin film(TF)