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Conference Paper
Electronic Characteristics of ZnO Thin Film Transistors by Low-temperature Process
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- Authors
- Sang Chul Lim, Ji Young Oh, Seong Youl Kang, Seong Deok Ahn, Sang Seok Lee, Kyoung Ik Cho, Jae Bon Koo
- Issue Date
- 2012-08
- Citation
- International Meeting on Information Display (IMID) 2012, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- The ZnO TFTs had a measured mobility of 0.11 cm 2 /Vs, an on/off current ratio of 10 4 , and a subthreshold swing of 2.2 V/dec. when annealing conditions were a temperature 150 o C with a pure oxygen atmosphere in inkjet printing. The nanorod ZnO TFTs were more oxygen-depleted than the nanosphere TFTs and, in turn, contained more charge carriers that were responsible for the metallic behavior.
- KSP Keywords
- Annealing conditions, Charge carriers, Electronic characteristics, Inkjet printing, Low-temperature process, Pure oxygen, Thin-Film Transistor(TFT), ZnO thin films, metallic behavior, on/off current ratio, oxygen atmosphere