상세정보
학술지
High-Performance Photoreceivers Based on Vertical-Illumination Type Ge-on-Si Photodetectors Operating up to 43 Gb/s at λ~1550nm
- 발행일
- 201312
- 출처
- Optics Express, v.21 no.25, pp.30718-30725
- ISSN
- 1094-4087
- 출판사
- Optical Society of America(OSA)
- 협약과제
- 13VB1800, 실리콘 나노포토닉스 기반 차세대 컴퓨터 칩기술, 김경옥
- 초록
- We present high-sensitivity photoreceivers based on a verticalillumination- type 100% Ge-on-Si p-i-n photodetectors (PDs), which operate up to 50 Gb/s with high responsivity. A butterfly-packaged photoreceiver using a Ge PD with 3-dB bandwidth (f-3dB) of 29 GHz demonstrates the sensitivities of 10.15 dBm for 40 Gb/s data rate and 9.47 dBm for 43 Gb/s data rate, at BER of 10-12 and {\\lambda} ~1550 nm. Also a photoreceiver based on a Ge PD with f-3dB~19 GHz shows 14.14 dBm sensitivity at 25 Gb/s operation. These results prove the high performance levels of verticalillumination type Ge PDs ready for practical high-speed network applications. © 2013 Optical Society of America.
- KSP 제안 키워드
- 1550 nm, 3-dB bandwidth, 40 gb/s, 50 GB, Ge-on-Si, High Sensitivity, High performance, High speed network, Illumination type, Network applications, Performance levels