ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article High-Performance Photoreceivers Based on Vertical-Illumination Type Ge-on-Si Photodetectors Operating up to 43 Gb/s at λ~1550nm
Cited 15 time in scopus Download 7 time Share share facebook twitter linkedin kakaostory
Authors
In Gyoo Kim, Ki-Seok Jang, Jiho Joo, Sanghoon Kim, Sanggi Kim, Kwang-Seong Choi, Jin Hyuk Oh, Sun Ae Kim, Gyungock Kim
Issue Date
2013-12
Citation
Optics Express, v.21, no.25, pp.30718-30725
ISSN
1094-4087
Publisher
Optical Society of America(OSA)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1364/OE.21.030716
Project Code
13VB1800, Silicon Nanophotonics-based next-generation computer chip, Kim Gyungock
Abstract
We present high-sensitivity photoreceivers based on a verticalillumination- type 100% Ge-on-Si p-i-n photodetectors (PDs), which operate up to 50 Gb/s with high responsivity. A butterfly-packaged photoreceiver using a Ge PD with 3-dB bandwidth (f-3dB) of 29 GHz demonstrates the sensitivities of 10.15 dBm for 40 Gb/s data rate and 9.47 dBm for 43 Gb/s data rate, at BER of 10-12 and {\\lambda} ~1550 nm. Also a photoreceiver based on a Ge PD with f-3dB~19 GHz shows 14.14 dBm sensitivity at 25 Gb/s operation. These results prove the high performance levels of verticalillumination type Ge PDs ready for practical high-speed network applications. © 2013 Optical Society of America.
KSP Keywords
1550 nm, 3-dB bandwidth, 40 gb/s, 50 GB, Ge-on-Si, High Sensitivity, High performance, High speed network, Illumination type, Network applications, Performance levels