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High Power Light Emitting Diode with Graphene Transparent Electrode
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- Authors
- Doo-Hyeb Youn, Hong-Kyw Choi, Young-Jun Yu, Seung-Hwan Kim, Seong-Ran Jeon, Sung-Yool Choi, Choon-Gi Choi
- Issue Date
- 2012-04
- Citation
- International Conference on Graphene 2012, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- High performance LEDs were fabricated using graphene transparent conducting electrode in ultraviolet (UV) and green region. In order to prevent the graphene delamination, two-layer lithographic patterning consisting of non-photosensitive low viscosity layer and common photoresist, was first demonstrated.Here we introduce the low-viscosity interfacial layer which prevents the strong interaction between photoresist and chemical groups on graphene. CVD (Chemical Vapor Deposition) graphene was doped by chemical treatment process using HNO 3 solution. O 2 plasma treatment process was introduced to increase the adhesion between Cr/Au electrode and p-GaN. Two layer lithograpjhic patterning and chemical doping of graphene resulted in enhancement of the current spreading over the p-GaN and the high power LED operation.
- KSP Keywords
- Au electrode, Chemical Vapor Deposition, Chemical groups, HNO 3, High Power LED, High Power Light Emitting Diode, High performance, Interfacial layer, Lithographic patterning, O 2, Treatment process