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Highly Efficient Doherty Amplifier with Peaking Cell Controlled Using Optimized Shaped Gate Voltage
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- Authors
- Joon Hyung Kim, Sung Jun Lee, Bong Hyuk Park, Jae Ho Jung, Kwang Chun Lee, Chul Soon Park
- Issue Date
- 2012-06
- Citation
- International Microwave Symposium (IMS) 2012, pp.1-3
- Language
- English
- Type
- Conference Paper
- Abstract
- In this paper, the optimum gate control for a peaking cell of a Doherty amplifier is proposed. The proposed gate voltage waveform based on a variation in transcoductance provides a sufficient fundamental current for a peaking cell, which is relevant to the performance of a carrier cell. For further verification, a Doherty amplifier controlled by the proposed method and targeting a 3G LTE base station at 2.6 GHz has been fabricated using a commercially available 120 W GaN (Gallium Nitride) device. The amplifier provides a drain efficiency of 49.2% at an average output power of 45.6 dBm with an 8.5 dB PAPR signal maintaining an adjacent channel leakage power ratio of 48 dBc through digital pre-distortion (DPD) functionality. © 2012 IEEE.
- KSP Keywords
- 2.6 GHz, 3G LTE, Adjacent channel leakage ratio(ACLR), Doherty amplifier, Fundamental current, Gallium Nitride, Gate voltage, Highly efficient, Leakage Power, Output power, Voltage waveform