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학술대회 Highly Efficient Doherty Amplifier with Peaking Cell Controlled Using Optimized Shaped Gate Voltage
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저자
김준형, 이성준, 박봉혁, 정재호, 이광천, 박철순
발행일
201206
출처
International Microwave Symposium (IMS) 2012, pp.1-3
DOI
https://dx.doi.org/10.1109/MWSYM.2012.6257775
협약과제
12MI1300, 차세대 이동통신 기지국용 Class-S 전력증폭기 기술 연구, 정재호
초록
In this paper, the optimum gate control for a peaking cell of a Doherty amplifier is proposed. The proposed gate voltage waveform based on a variation in transcoductance provides a sufficient fundamental current for a peaking cell, which is relevant to the performance of a carrier cell. For further verification, a Doherty amplifier controlled by the proposed method and targeting a 3G LTE base station at 2.6 GHz has been fabricated using a commercially available 120 W GaN (Gallium Nitride) device. The amplifier provides a drain efficiency of 49.2% at an average output power of 45.6 dBm with an 8.5 dB PAPR signal maintaining an adjacent channel leakage power ratio of 48 dBc through digital pre-distortion (DPD) functionality. © 2012 IEEE.
키워드
Doherty amplifier, GaN, Power amplifier
KSP 제안 키워드
2.6 GHz, 3G LTE, Adjacent channel leakage ratio(ACLR), Doherty amplifier, Fundamental current, Gallium Nitride(GaN), Gate control, Leakage power, Output power, Voltage waveform, base station(BS)