상세정보
학술대회
Highly Efficient Doherty Amplifier with Peaking Cell Controlled Using Optimized Shaped Gate Voltage
- 발행일
- 201206
- 출처
- International Microwave Symposium (IMS) 2012, pp.1-3
- 협약과제
- 12MI1300, 차세대 이동통신 기지국용 Class-S 전력증폭기 기술 연구, 정재호
- 초록
- In this paper, the optimum gate control for a peaking cell of a Doherty amplifier is proposed. The proposed gate voltage waveform based on a variation in transcoductance provides a sufficient fundamental current for a peaking cell, which is relevant to the performance of a carrier cell. For further verification, a Doherty amplifier controlled by the proposed method and targeting a 3G LTE base station at 2.6 GHz has been fabricated using a commercially available 120 W GaN (Gallium Nitride) device. The amplifier provides a drain efficiency of 49.2% at an average output power of 45.6 dBm with an 8.5 dB PAPR signal maintaining an adjacent channel leakage power ratio of 48 dBc through digital pre-distortion (DPD) functionality. © 2012 IEEE.
- KSP 제안 키워드
- 2.6 GHz, 3G LTE, Adjacent channel leakage ratio(ACLR), Doherty amplifier, Fundamental current, Gallium Nitride(GaN), Gate control, Leakage power, Output power, Voltage waveform, base station(BS)