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High-Performance Ge Photoreceivers Operating in the Wavelength Range of 850 nm~1550 nm
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- Authors
- Ki-Seok Jang, Sanghoon Kim, In Gyoo Kim, Jiho Joo, Gyungock Kim
- Issue Date
- 2012-07
- Citation
- Opto-Electronics and Communications Conference (OECC) 2012, pp.829-830
- Language
- English
- Type
- Conference Paper
- Abstract
- We present high-performance photoreceivers based on vertical-illumination- type 100% Ge-on-Si p-i-n photo-detectors (PDs) operating at {\\lambda} ~1550 nm and at {\\lambda} ~850 nm. The TO-can packaged photoreceivers with Ge PDs optimized for {\\lambda} ~1550 nm and data rates of 2.5 Gbps and 10 Gbps exhibit the sensitivities of -25.5 dBm and -9.5 dBm (bit error rate of 10 -12), respectively. Also, the 10 Gbps photoreceiver with a Ge PD optimized for {\\lambda} ~850 nm shows the sensitivity of -15.64 dBm. This experimental result indicates that the Ge photoreceiver based on silicon photonics technology can readily provide cost-effective solutions for optical network applications. © 2012 IEEE.
- KSP Keywords
- 1550 nm, 850 nm, Bit Error rate, Experimental Result, Ge-on-Si, High performance, P-i-n, Silicon photonics technology, TO-CAN, Type 1, Wavelength range