상세정보
학술지
Light-Exposure Effects on Electrical Characteristics of 6,13-Bis(triisopropylsilylethynyl)Pentacene/CdTe Composite Thin-Film Transistors
- 발행일
- 201305
- 출처
- Japanese Journal of Applied Physics, v.52 no.5 PART 2, pp.1-4
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 12VC1600, 150ºC이하 인쇄기반 플렉세블 디스플에이 백플레인용 산화물 반도체, 절연체 잉크소재 및 공정 기술 개발, 도이미
- 초록
- We report the light-exposure effects on solution-processed organic thin-film transistors (TFTs) based on a 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) semiconductor. Under light exposure, the increase in drain current and the positive shift of threshold voltage are observed, which are more remarkable for the TIPS-pentacene/cadmium telluride composite TFT. Herein the photosensitivity in these TFTs is explained in terms of photovoltaic and photoconductive effects. Composite semiconductors blended with sensitizers are suggested to enhance the quantum efficiency of organic phototransistors. © 2013 The Japan Society of Applied Physics.
- KSP 제안 키워드
- 13-bis(triisopropylsilylethynyl) pentacene, Applied physics, Drain current, Light exposure, Organic thin-film transistors, Quantum Efficiency, Solution-processed, TIPS-pentacene, Thin-Film Transistor(TFT), cadmium telluride, electrical characteristics