상세정보
학술지
Capacitance-Voltage Characterization of Surface-Treated Al2O3/GaN Metal-Oxide-Semiconductor Structures
- 저자
- 배성범, 김기원, 이용수, 이정희, 배영호, Sorin Cristoloveanu
- 발행일
- 201309
- 출처
- Microelectronic Engineering, v.109, pp.10-12
- ISSN
- 0167-9317
- 출판사
- Elsevier
- 협약과제
- 13VB1700, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
- 초록
- The effect of surface treatment on the interfacial properties between the Al2O3 gate dielectric and the recess-etched GaN surface of the AlGaN/GaN-based MOSFET has been characterized by capacitance-voltage (C-V) measurements. The recessed GaN surface was treated in the tetramethylammonium hydroxide (TMAH) solution at 85 C for 10 min to smoothen the surface and remove the plasma damage. The surface treatment decreases the interface trap density by removing surface traps related to the native surface oxide such as Ga xOy, which results in much improved C-V characteristics. © 2013 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- C-V characteristics, Capacitance-voltage characterization(CV), Computer Vision(CV), GaN surface, GaN-Based, Interfacial Properties, Metal-Oxide-Semiconductor structures, Metal-oxide(MOX), Surface treatments, Tetramethylammonium hydroxide, gate dielectric