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학술지 Effects of Two-Step Mg Doping in p-GaN on Efficiency Characteristics of InGaN Blue Light-Emitting Diodes without AlGaN Electron-Blocking Layers
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저자
류한열, 이종무
발행일
201305
출처
Applied Physics Letters, v.102 no.18, pp.1-4
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.4804382
협약과제
12MB3300, 6˝급 에피웨이퍼 기반 수직형 LED 칩용 Laser Lift-off 장비 개발, 이종무
초록
A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations. © 2013 AIP Publishing LLC.
KSP 제안 키워드
Blue light-emitting diodes, Current leakage, Doping profile, EL efficiency, Efficiency characteristics, Electron blocking, Electron current, GaN layers, Hole concentration, Layer structure, Mg doping