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Journal Article
Effects of Two-Step Mg Doping in p-GaN on Efficiency Characteristics of InGaN Blue Light-Emitting Diodes without AlGaN Electron-Blocking Layers
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- Authors
- Han-Youl Ryu, Jong-Moo Lee
- Issue Date
- 2013-05
- Citation
- Applied Physics Letters, v.102, no.18, pp.1-4
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations. © 2013 AIP Publishing LLC.
- KSP Keywords
- Blocking layer, Blue light-emitting diodes, Current leakage, Doping profile, EL efficiency, Electron current, Electron-blocking, GaN layers, Layer structure, Light-emitting diode (led), Mg doping