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Journal Article Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
Cited 998 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Gwan-Hyoung Lee, Young-Jun Yu, Xu Cui, Nicholas Petrone, Chul-Ho Lee, Min Sup Choi, Dae-Yeong Lee, Changgu Lee, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Colin Nuckolls, Philip Kim, James Hone
Issue Date
2013-09
Citation
ACS Nano, v.7, no.9, pp.7931-7936
ISSN
1936-0851
Publisher
American Chemical Society (ACS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1021/nn402954e
Abstract
Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical "stacking" to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up to 45 cm2/Vs and operating gate voltage below 10 V, with greatly reduced hysteresis. Taking advantage of the mechanical strength and flexibility of these materials, we demonstrate integration onto a polymer substrate to create flexible and transparent FETs that show unchanged performance up to 1.5% strain. These heterostructure devices consisting of ultrathin two-dimensional (2D) materials open up a new route toward high-performance flexible and transparent electronics. © 2013 American Chemical Society.
KSP Keywords
Boron nitride(BN), Field-effect transistors(FETs), Heterostructure devices, Hexagonal boron nitride(h-BN), High performance, Mechanical Strength, Novel material, Transparent electronics, atomic layer, atomically thin, flexible and transparent