상세정보
학술지
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
- 저자
- 이관형, 유영준, Xu Cui, Nicholas Petrone, 이철호, 최민섭, Dae-Yeong Lee, 이창구, 유원종, Kenji Watanabe, Takashi Taniguchi, Colin Nuckolls, Philip Kim, James Hone
- 발행일
- 201309
- 출처
- ACS Nano, v.7 no.9, pp.7931-7936
- ISSN
- 1936-0851
- 출판사
- American Chemical Society (ACS)
- 협약과제
- 13ZE1100, ETRI 창의연구실 사업, 손승원
- 초록
- Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical "stacking" to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up to 45 cm2/Vs and operating gate voltage below 10 V, with greatly reduced hysteresis. Taking advantage of the mechanical strength and flexibility of these materials, we demonstrate integration onto a polymer substrate to create flexible and transparent FETs that show unchanged performance up to 1.5% strain. These heterostructure devices consisting of ultrathin two-dimensional (2D) materials open up a new route toward high-performance flexible and transparent electronics. © 2013 American Chemical Society.
- KSP 제안 키워드
- Boron nitride(BN), Field-effect transistors(FETs), Heterostructure devices, Hexagonal boron nitride(h-BN), High performance, Mechanical Strength, Novel material, Transparent electronics, atomic layer, atomically thin, flexible and transparent