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Conference Paper
Oxygen Vacancy Effect for the Illumination Instability of In-Ga-O Transparent Thin Film Transistors
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- Authors
- Hojun Ryu, Jun-Yong Bak, Shinhyuk Yang, Sang-Hee Park, Sung-Min Yoon
- Issue Date
- 2012-08
- Citation
- International Meeting on Information Display (IMID) 2012, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- Transparent thin film transistors with In-Ga-O channel have been fabricated using co-planar top gate structure. Alumina protection and gate insulator layer have been deposited by atomic layer deposition onto the In-Ga-O channel formed in oxygen and argon mixture. The fabricated devices were thermally treated under 300 o C, 1 hour. The mobility of the TFT is 12.79 cm 2 /Vs and V t is 1.59 V of 250 o C annealed device. The transfer curves shows small hysteresis and tiny threshold voltage change with oxygen partial pressure. It is considered that the deep level oxygen vacancy state has been formed in the fabrication process.
- KSP Keywords
- AND gate, Atomic Layer Deposition, Co-Planar, Deep level, Fabrication process, Insulator layer, Oxygen vacancy, Thin-Film Transistor(TFT), Voltage change, gate insulator, oxygen partial pressure