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Conference Paper
Passivation of High Mobility Oxide TFT
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- Authors
- Sang-Hee Ko Park, Minki Ryu, Himchan Oh, OhSang Kwon, Jong Woo Kim, Eunsook Park, Byoung Gon Yu, Jae-Eun Pi, Chi-Sun Hwang, Sun Kwon Lim
- Issue Date
- 2012-08
- Citation
- International Meeting on Information Display (IMID) 2012, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- We provide passivation structure which is suitable for the high mobility oxide TFT. With hydrogen barrier of 45 nm of PEALD alumina film, we can deposit PECVD SiN x film as the second passivation layer. Double layered passivation film results in oxide TFT with mobility of 28.2 cm 2 /V.s, V th of 1.2 V, and S.S of 0.12 V/dec. Threshold voltage change under 20 V of V gs at 60 o C for 10,000 seconds was 0.64 V.
- KSP Keywords
- 5 nm, Alumina film, Double layered, Oxide TFTs, Passivation film, SiN x, Voltage change, high mobility, passivation layer, threshold voltage(Vth)