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Top-gate staggered poly(3,3″′-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes
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- Authors
- Minseok Kim, Jae Bon Koo, Kang-Jun Baeg, Soon-Won Jung, Byeong-Kwon Ju, In-Kyu You
- Issue Date
- 2012-10
- Citation
- Applied Physics Letters, v.101, no.13, pp.1-5
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP),
- Language
- English
- Type
- Journal Article
- Abstract
- Here, we report on high-performance top-gated poly(3,3??-dialkyl- quarterthiophene) (PQT-12) organic thin-film transistors (OTFTs) with reverse-offset-printed (ROP) silver (Ag) source/drain (S/D) electrodes. OTFT devices with ROP S/D electrodes using Ag nanopaste show higher performance (~0.01cm2/Vs) than those fabricated by vacuum electron beam evaporation with conventional photolithography and a standard lift-off process (~1×10-3cm2/Vs). This dissimilarity is attributed to the higher work function (-4.9eV) of the ROP Ag electrode due to AgO formation on the Ag surface during thermal annealing. This results in a low interfacial hole injection energy barrier between the S/D electrodes and the PQT-12 semiconductor. © 2012 American Institute of Physics.
- KSP Keywords
- Ag electrode, Ag nanopaste, Ag surface, Energy barrier, High performance, Higher performance, Injection energy, Lift-off process, Organic thin-film transistors (otfts), PQT-12, S/D electrodes