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학술지 Top-Gate Staggered poly(3,3-dialkyl-quarterthiophene) Organic Thin-Film Transistors with Reverse-Offset-Printed Silver Source/Drain Electrodes
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저자
김민석, 구재본, 백강준, 정순원, 주병권, 유인규
발행일
201210
출처
Applied Physics Letters, v.101 no.13, pp.1-5
ISSN
0003-6951
출판사
American Institute of Physics (AIP),
DOI
https://dx.doi.org/10.1063/1.4755878
초록
Here, we report on high-performance top-gated poly(3,3??-dialkyl- quarterthiophene) (PQT-12) organic thin-film transistors (OTFTs) with reverse-offset-printed (ROP) silver (Ag) source/drain (S/D) electrodes. OTFT devices with ROP S/D electrodes using Ag nanopaste show higher performance (~0.01cm2/Vs) than those fabricated by vacuum electron beam evaporation with conventional photolithography and a standard lift-off process (~1×10-3cm2/Vs). This dissimilarity is attributed to the higher work function (-4.9eV) of the ROP Ag electrode due to AgO formation on the Ag surface during thermal annealing. This results in a low interfacial hole injection energy barrier between the S/D electrodes and the PQT-12 semiconductor. © 2012 American Institute of Physics.
KSP 제안 키워드
Ag electrode, Ag nanopaste, Ag surface, High performance, Higher performance, Injection energy, Organic thin-film transistors (otfts), PQT-12, S/D electrodes, Source/drain electrodes, Thermal annealing