상세정보
학술지
Top-Gate Staggered poly(3,3-dialkyl-quarterthiophene) Organic Thin-Film Transistors with Reverse-Offset-Printed Silver Source/Drain Electrodes
- 발행일
- 201210
- 출처
- Applied Physics Letters, v.101 no.13, pp.1-5
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP),
- 초록
- Here, we report on high-performance top-gated poly(3,3??-dialkyl- quarterthiophene) (PQT-12) organic thin-film transistors (OTFTs) with reverse-offset-printed (ROP) silver (Ag) source/drain (S/D) electrodes. OTFT devices with ROP S/D electrodes using Ag nanopaste show higher performance (~0.01cm2/Vs) than those fabricated by vacuum electron beam evaporation with conventional photolithography and a standard lift-off process (~1×10-3cm2/Vs). This dissimilarity is attributed to the higher work function (-4.9eV) of the ROP Ag electrode due to AgO formation on the Ag surface during thermal annealing. This results in a low interfacial hole injection energy barrier between the S/D electrodes and the PQT-12 semiconductor. © 2012 American Institute of Physics.
- KSP 제안 키워드
- Ag electrode, Ag nanopaste, Ag surface, High performance, Higher performance, Injection energy, Organic thin-film transistors (otfts), PQT-12, S/D electrodes, Source/drain electrodes, Thermal annealing