상세정보
학술지
A Ka-Band 6-W High Power MMIC Amplifier with High Linearity for VSAT Applications
- 발행일
- 201306
- 출처
- ETRI Journal, v.35 no.3, pp.546-549
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 12PR1200, 통해기 위성 Ka대역 통신탑재체 우주인증 및 실용화 검증기술 개발, 안도섭
- 초록
- A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-μm GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 mm2 can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range. © 2013 ETRI.
- KSP 제안 키워드
- 5 GHz, Frequency Range, GaAs pHemt, High power microwave(HPM), Intercept point(IIP3), Power added efficiency(PAE), Saturated output power, Small signal gain, Very Small Aperture Terminal(VSAT), high linearity, ka-band