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학술지 A Ka-Band 6-W High Power MMIC Amplifier with High Linearity for VSAT Applications
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저자
정진철, 장동필, 염인복
발행일
201306
출처
ETRI Journal, v.35 no.3, pp.546-549
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.13.0212.0407
협약과제
12PR1200, 통해기 위성 Ka대역 통신탑재체 우주인증 및 실용화 검증기술 개발, 안도섭
초록
A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-μm GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 mm2 can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range. © 2013 ETRI.
키워드
High power amplifier (HPA), Ka-band, Linearity, Microwave monolithic integrated circuit (MMIC), Output third-order intercept point (OIP3), Very small aperture terminal (VSAT)
KSP 제안 키워드
5 GHz, Frequency Range, GaAs pHemt, High power amplifier(HPA), High power microwave(HPM), Intercept point(IIP3), Power added efficiency(PAE), Saturated output power, Small signal gain, Very Small Aperture Terminal(VSAT), high linearity