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Journal Article
A Ka-Band 6-W High Power MMIC Amplifier with High Linearity for VSAT Applications
- Authors
- Jin-Cheol Jeong, Dong-Pil Jang, In-Bok Yom
- Issue Date
- 2013-06
- Citation
- ETRI Journal, v.35, no.3, pp.546-549
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-μm GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 mm2 can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range. © 2013 ETRI.
- KSP Keywords
- 5 GHz, Frequency range, GaAs PHEMT, High linearity, High power microwave, Ka-Band, Power added efficiency(PAE), Saturated output power, Small signal gain, Very Small Aperture Terminal(VSAT), integrated circuit(IC)