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Conference Paper
The thermal annealing effects of gate insulator on the electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors
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- Authors
- Issue Date
- 2012-09
- Citation
- International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Annealing effects, B-doped, Oxide thin films, Thermal annealing, Thin-Film Transistor(TFT), Zn oxide, electrical performance and stability, gate insulator, thin film(TF)