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학술대회
The thermal annealing effects of gate insulator on the electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors
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- 저자
- 발행일
- 201209
- 출처
- International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1
- 협약과제
- 11VB2100, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
- KSP 제안 키워드
- Annealing effects, B-doped, Gate insulator, Oxide thin films, Thermal annealing, Thin-Film Transistor(TFT), Zn oxide, electrical performance and stability, thin film(TF)