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Conference Paper
TiN capping layer을 이용한 Titanium silicide 형성에 관한 연구
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- Issue Date
- 2012-06
- Citation
- 대한전자공학회 종합 학술 대회 (하계) 2012, pp.359-362
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- In this paper, we investigated the titanium silicide (TiSi) film having ultra low sheet resistance property. To improve the sheet resistance of TiSi film, the TiN capping layer and two steps thermal treatment were introduced. TiN capping layer prevented the impurity, such as oxygen and carbon, in the ambient during the rapid thermal anneal (RTA) process. Moreover, two steps RTA process can be improved the sheet resistance of TiSi film because of changing of the TiSi phase. Lastly, the initial Ti thickness was strongly depends on the sheet resistance of TiSi. This is because the initial Ti thickness affect the TiSi composition and thickness.
- KSP Keywords
- Capping layer, Oxygen and carbon, RTA process, Resistance property, Thermal treatments, Titanium Silicide, Ultra Low, low sheet resistance, rapid thermal anneal