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Low-Temperature-Grown InGaAs Terahertz Photomixer Embedded in InP Thermal Spreading Layer Regrown by Metalorganic Chemical Vapor Deposition
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- Authors
- Kiwon Moon, Dong Woo Park, Il-Min Lee, Namje Kim, Hyunsung Ko, Sang-Pil Han, Donghun Lee, Jeong-Woo Park, Sam Kyu Noh, Kyung Hyun Park
- Issue Date
- 2013-12
- Citation
- Optics Letters, v.38, no.24, pp.5466-5469
- ISSN
- 0146-9592
- Publisher
- Optical Society of America(OSA)
- Language
- English
- Type
- Journal Article
- Abstract
- A novel buried photomixer for integrated photonic terahertz devices is proposed. The active region of the mesastructure InGaAs photomixer is buried in an InP layer grown by metalorganic chemical vapor deposition (MOCVD) to improve heat dissipation, which is an important problem for terahertz photomixers. The proposed photomixer shows good thermal properties compared to a conventional planar-type photomixer. The MOCVD regrowth process indicates the possibility for THz photomixers to be integrated monolithically with conventional photonic devices. © 2013 Optical Society of America.
- KSP Keywords
- Heat dissipation, Metalorganic chemical vapor deposition, Planar-type, Terahertz device, Thermal spreading, active region, conventional planar, low temperature, photonic devices, thermal properties