상세정보
학술지
Low-Temperature-Grown InGaAs Terahertz Photomixer Embedded in InP Thermal Spreading Layer Regrown by Metalorganic Chemical Vapor Deposition
- 발행일
- 201312
- 출처
- Optics Letters, v.38 no.24, pp.5466-5469
- ISSN
- 0146-9592
- 출판사
- Optical Society of America(OSA)
- 협약과제
- 12SF1400, 포토닉스 집적회로 기반 테라헤르츠 무선 인터커넥션 기술 개발, 박경현
- 초록
- A novel buried photomixer for integrated photonic terahertz devices is proposed. The active region of the mesastructure InGaAs photomixer is buried in an InP layer grown by metalorganic chemical vapor deposition (MOCVD) to improve heat dissipation, which is an important problem for terahertz photomixers. The proposed photomixer shows good thermal properties compared to a conventional planar-type photomixer. The MOCVD regrowth process indicates the possibility for THz photomixers to be integrated monolithically with conventional photonic devices. © 2013 Optical Society of America.
- KSP 제안 키워드
- Heat Dissipation, Low temperature(LT), Metalorganic chemical vapor deposition, Planar-type, Terahertz device, Thermal spreading, active region, conventional planar, photonic devices, thermal properties