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학술지 Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices
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최민섭, 이관형, 유영준, 이대형, 이승환, Philip Kim, James Hone, 유원종
Nature Communications, v.4, pp.1-7
Nature Publishing Group
Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials. © 2013 Macmillan Publishers Limited. All rights reserved.
KSP 제안 키워드
Boron nitride(BN), Charge transport, Charge trapping layer, Field-effect transistors(FETs), Floating gate, Hexagonal boron nitride(h-BN), High Mobility, Non-Volatile Memory(NVM), Nonvolatile memory devices, ON/OFF current ratio, Stacking order