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Conference Paper
Patterning of Submicron Scale Under Low Pressure
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- Authors
- Zin-Sig Kim, Kun-Sik Park, Jae-Kyoung Mun, Eunsoo Nam
- Issue Date
- 2013-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2013, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- Advantages of UV-NIL include direct patterning of micro-to nano-scale patterns on various flexible substrates, three dimensional (3D) patterns and the patterning of metal. These advantages make it possible for UV-NIL to be applied in the fields of electronics devices, magnetic memory structures, organic light-emitting diodes, biosensor fabrication, fabrication of optical sensor devices and hybrid-laser system devices for photonic applications. In this study is demonstrated, that the UV-NIL using normal mask aligner MA6 under low pressure was applied to fabricate submicron patterns on the 6 inch sized Si-wafer with the feature size ranging from 350 nm to 2000 nm, the pattern depth of 800 nm and the thickness of the residual layer less than 100 nm over large areas.
- KSP Keywords
- Biosensor fabrication, Feature size, Flexible substrate, Magnetic memory, Memory structure, Organic light-emitting diodes(OLEDS), Pattern depth, Sensor device, Three dimensional(3D), UV-NIL, direct patterning