상세정보
학술지
Depinning of the Fermi Level at the Ge Schottky Interface through Se Treatment
- 저자
- V. Janardhanam, Hyung-Joong Yun, Jouhan Lee, V. Rajagopal Reddy, 홍효봉, Kwang-Soon Ahn, 최철종
- 발행일
- 201312
- 출처
- Scripta Materialia, v.69 no.11-12, pp.809-811
- ISSN
- 1359-6462
- 출판사
- Elsevier
- 협약과제
- 13VC1100, 실감미디어를 위한 플렉시블 센서 기반 촉감 저장·재생 플랫폼 원천기술 개발, 홍효봉
- 초록
- Depinning of the Fermi level at Al/Ge junctions was achieved through Se treatment. Al contacts to n- and p-type Ge with Se treatment exhibited ohmic and Schottky behaviors, respectively. During Se treatment, in addition to surface passivation by Se atoms, the chemical reaction between Se and Ge resulted in the formation of a partially ionic Se-Ge alloy film. This led to the reduction of surface states, which was responsible for the Fermi-level depinning of Ge. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
- KSP 제안 키워드
- Alloy films, Fermi-level depinning, Schottky interface, Surface passivation, chemical reaction(Biomimetic), p-Type, surface states