ETRI Knowledge Sharing Platform : Depinning of the Fermi Level at the Ge Schottky Interface through Se Treatment

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Journal Article Depinning of the Fermi Level at the Ge Schottky Interface through Se Treatment

Cited 11 time in scopus

Authors: V. Janardhanam, Hyung-Joong Yun, Jouhan Lee, V. Rajagopal Reddy, Hyobong Hong, Kwang-Soon Ahn, Chel-Jong Choi

Abstract: Depinning of the Fermi level at Al/Ge junctions was achieved through Se treatment. Al contacts to n- and p-type Ge with Se treatment exhibited ohmic and Schottky behaviors, respectively. During Se treatment, in addition to surface passivation by Se atoms, the chemical reaction between Se and Ge resulted in the formation of a partially ionic Se-Ge alloy film. This led to the reduction of surface states, which was responsible for the Fermi-level depinning of Ge. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

KSP Keywords: Alloy films, Fermi-level depinning, Schottky interface, Surface passivation, chemical reaction(Biomimetic), p-Type, surface states

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