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학술지 CMOS Doherty Amplifier With Variable Balun Transformer and Adaptive Bias Control for Wireless LAN Application
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유남식, 장승현, 이광천, 정영채
IEEE Journal of Solid-State Circuits, v.49 no.6, pp.1356-1365
This paper presents a novel CMOS Doherty power amplifier (PA) with an impedance inverter using a variable balun transformer (VBT) and adaptive bias control of an auxiliary amplifier. Unlike a conventional quarter-wavelength {\\lambda}/4 transmission line impedance inverter of a Doherty PA, the proposed VBT impedance inverter can achieve load modulation without any phase delay circuit. As a result, a {\\lambda} /4 phase compensation circuit at the input path of the auxiliary amplifier can be removed, and the total size of the Doherty PA can be reduced. Additionally, an enhancement of the power efficiency at backed-off power levels can successfully be achieved with an adaptive gate bias in a common gate stage of the auxiliary amplifier. The PA, fabricated with 0.13-μm CMOS technology, achieved a 1-dB compression point (P1 dB) of 31.9 dBm and a power-added efficiency (PAE) at P1 dB of 51%. When the PA is tested with 802.11g WLAN orthogonal frequency division multiplexing (OFDM) signal of 54 Mb/s, a 25-dB error vector magnitude (EVM) compliant output power of 22.8 dBm and a PAE of 30.1% are obtained, respectively. © 1966-2012 IEEE.
KSP 제안 키워드
1-dB compression point, Adaptive bias, Bias control, CMOS Technology, Compensation circuit, Delay circuit, Doherty PA, Doherty amplifier, Doherty power amplifier(DPA), Line Impedance, Orthogonal frequency division Multiplexing(OFDM)