상세정보
학술지
Double-Layered Passivation Film Structure of Al2O3/SiNx for High Mobility Oxide Thin Film Transistors
- 발행일
- 201303
- 출처
- Journal of Vacuum Science and Technology B, v.31 no.2, pp.1-6
- ISSN
- 1071-1023
- 출판사
- American Vacuum Society (AVS)
- 협약과제
- 12MB2300, 고품위 plastic AMOLED 원천 기술 개발, 유병곤
- 초록
- The optimization of the passivation process for oxide thin film transistors with high carrier mobility was investigated. Hydrogen incorporation into oxide channels during the deposition of SiNx could degrade device stability and uniformity, especially for high-mobility devices. A novel double-layered passivation film structure composed of Al2O3/SiN x was proposed, in which thin and dense Al2O3 film prepared by atomic layer deposition was introduced underneath the SiN x layer. In-Ga-Zn-O TFT passivated with the proposed double-layered films showed no significant negative shift in turn-on voltage, even after passivation. The field-effect mobility and subthreshold swing were typically measured as 27.7 cm2 V-1 s-1 and 0.11 V/dec, respectively. Hydrogen doping was effectively protected by the introduction of Al2O3 as thin as 15 nm. © 2013 American Vacuum Society.
- KSP 제안 키워드
- 5 nm, As 2, Atomic Layer Deposition, Device stability, Double layered, Film structure, First Stokes(S1), High Mobility, Hydrogen doping, Hydrogen incorporation, In-Ga-Zn-O(IGZO)