상세정보
학술지
Graphene Transparent Electrode for Enhanced Optical Power and Thermal Stability in GaN Light-Emitting Diodes
- 발행일
- 201302
- 출처
- Nanotechnology, v.24 no.7, pp.1-7
- ISSN
- 0957-4484
- 출판사
- Institute of Physics (IOP)
- 협약과제
- 12ZF1100, Seed형 기술개발을 위한 창의형 연구사업, 박선희
- 초록
- We report an improvement of the optical power and thermal stability of GaN LEDs using a chemically doped graphene transparent conducting layer (TCL) and a low-resistance contact structure. In order to obtain low contact resistance between the TCL and p-GaN surface, a patterned graphene TCL with Cr/Au electrodes is suggested. A bi-layer patterning method of a graphene TCL was utilized to prevent the graphene from peeling off the p-GaN surface. To improve the work function and the sheet resistance of graphene, CVD (chemical vapor deposition) graphene was doped by a chemical treatment using a HNO3 solution. The effect of the contact resistance on the power degradation of LEDs at a high injection current level was investigated. In addition, the enhancement of the optical power via an increase in the current spreading and a decrease in the potential barrier of the graphene TCL was investigated. © 2013 IOP Publishing Ltd.
- KSP 제안 키워드
- Au electrode, Chemical Vapor Deposition, Contact resistance(73.40.Cg), Contact structure, GaN LED, GaN surface, Injection current, Low contact resistance, Optical power, Patterned graphene, Peeling off