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학술지 Graphene Transparent Electrode for Enhanced Optical Power and Thermal Stability in GaN Light-Emitting Diodes
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저자
윤두협, 유영준, 최홍규, 김석환, 최성율, 최춘기
발행일
201302
출처
Nanotechnology, v.24 no.7, pp.1-7
ISSN
0957-4484
출판사
Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1088/0957-4484/24/7/075202
협약과제
12ZF1100, Seed형 기술개발을 위한 창의형 연구사업, 박선희
초록
We report an improvement of the optical power and thermal stability of GaN LEDs using a chemically doped graphene transparent conducting layer (TCL) and a low-resistance contact structure. In order to obtain low contact resistance between the TCL and p-GaN surface, a patterned graphene TCL with Cr/Au electrodes is suggested. A bi-layer patterning method of a graphene TCL was utilized to prevent the graphene from peeling off the p-GaN surface. To improve the work function and the sheet resistance of graphene, CVD (chemical vapor deposition) graphene was doped by a chemical treatment using a HNO3 solution. The effect of the contact resistance on the power degradation of LEDs at a high injection current level was investigated. In addition, the enhancement of the optical power via an increase in the current spreading and a decrease in the potential barrier of the graphene TCL was investigated. © 2013 IOP Publishing Ltd.
KSP 제안 키워드
Au electrode, Chemical Vapor Deposition, Contact resistance(73.40.Cg), Contact structure, GaN LED, GaN surface, Injection current, Low contact resistance, Optical power, Patterned graphene, Peeling off