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Journal Article Graphene Transparent Electrode for Enhanced Optical Power and Thermal Stability in GaN Light-Emitting Diodes
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Authors
Doo-Hyeb Youn, Young-Jun Yu, HongKyw Choi, Suck-Hwan Kim, Sung-Yool Choi, Choon-Gi Choi
Issue Date
2013-02
Citation
Nanotechnology, v.24, no.7, pp.1-7
ISSN
0957-4484
Publisher
Institute of Physics (IOP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1088/0957-4484/24/7/075202
Abstract
We report an improvement of the optical power and thermal stability of GaN LEDs using a chemically doped graphene transparent conducting layer (TCL) and a low-resistance contact structure. In order to obtain low contact resistance between the TCL and p-GaN surface, a patterned graphene TCL with Cr/Au electrodes is suggested. A bi-layer patterning method of a graphene TCL was utilized to prevent the graphene from peeling off the p-GaN surface. To improve the work function and the sheet resistance of graphene, CVD (chemical vapor deposition) graphene was doped by a chemical treatment using a HNO3 solution. The effect of the contact resistance on the power degradation of LEDs at a high injection current level was investigated. In addition, the enhancement of the optical power via an increase in the current spreading and a decrease in the potential barrier of the graphene TCL was investigated. © 2013 IOP Publishing Ltd.
KSP Keywords
Au electrode, Bi-layer, Chemical Vapor Deposition, Contact resistance(73.40.Cg), Contact structure, GaN LED, GaN surface, Injection current, Low contact resistance, Patterned graphene, Peeling off